The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117004
Reference10 articles.
Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction;Photonics Research;2021-02-10
3. Fabrication of a GaN template with an air tunnel in a patterned sapphire substrate using carbonization with a photoresist mask;Japanese Journal of Applied Physics;2019-12-13
4. Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices;Applied Nanoscience;2019-03-07
5. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate;AIP Advances;2016-03
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