Structural and electrical properties of reactively sputtered InN thin films on AlN‐buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354822
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Emergence of high quality sputtered III-nitride semiconductors and devices;Semiconductor Science and Technology;2019-08-12
2. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer;Journal of Crystal Growth;2016-01
3. Two-step method for the deposition of AlN by radio frequency sputtering;Thin Solid Films;2013-10
4. Structure and properties of gallium nitride thin films deposited on Si (111) by using radio-frequency magnetron sputtering;Journal of the Korean Physical Society;2013-02
5. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer;Thin Solid Films;2012-01
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