Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase TC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1875746
Reference19 articles.
1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
2. Mn Interstitial Diffusion in(Ga,Mn)As
3. Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers
4. Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films
5. Curie temperature limit in ferromagneticGa1−xMnxAs
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1. Cubic anisotropy in (Ga,Mn)As layers: Experiment and theory;Physical Review B;2018-05-03
2. RETRACTED: Magneto transport measurements to unravel the epitaxial strain control of magnetic anisotropy in Ga1−xMnxAs/InGaAs layers;Journal of Magnetism and Magnetic Materials;2018-04
3. In situ annealing of III1-xMnxV ferromagnetic semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-03
4. Heat-Treatment-Induced Compositional Evolution and Magnetic State Transition in Magnetic Chalcogenide Semiconductor GeFeTe without Structural Phase Change;ACS Applied Materials & Interfaces;2017-10-24
5. Magnetic Semiconductors;Handbook of Crystal Growth;2015
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