In situ annealing of III1-xMnxV ferromagnetic semiconductors-Reference-Cited by-同舟云学术

In situ annealing of III1-xMnxV ferromagnetic semiconductors

Published:2018-03 Issue:2 Volume:36 Page:02D102
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Liu Xinyu¹,Bac Seul-Ki²,Sapkota Pitambar³,Gorsak Cameron,Li Xiang,Dong Sining,Lee Sanghoon⁴,Ptasinska Sylwia³,Furdyna Jacek K.,Dobrowolska Margaret

Affiliation:

1. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

2. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Department of Physics, Korea University, Seoul 136-701, South Korea

3. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556

4. Department of Physics, Korea University, Seoul 136-701, South Korea

Funder

NSF | MPS | Division of Materials Research

National Research Foundation of Korea

Korea University

U.S. Department of Energy

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5014983

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