Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
Author:
Affiliation:
1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
Funder
Samsung
International Business Machines Corporation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5058265
Reference27 articles.
1. Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions
2. Spin-Polarized Inelastic Tunneling through Insulating Barriers
3. Effect of bias-induced spin flips on spin torque: Enhancement of current and spin transfer in magnetic tunnel junctions
4. Inelastic tunneling spectra of MgO barrier magnetic tunneling junctions showing large magnon contribution
5. Inelastic electron-magnon interaction and spin transfer torque
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