Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2786015
Reference16 articles.
1. Improved Light-Output Power of GaN LEDs by Selective Region Activation
2. InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
3. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
4. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
5. Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals
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