AlGaN composition dependence of the band offsets for epitaxial Gd2O3/AlxGa1−xN (0 ≤ x ≤ 0.67) heterostructures-Reference-Cited by-同舟云学术

AlGaN composition dependence of the band offsets for epitaxial Gd2O3/AlxGa1−xN (0 ≤ x ≤ 0.67) heterostructures

Published:2014-07-07 Issue:1 Volume:105 Page:012102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ihlefeld Jon F.¹,Brumbach Michael¹,Allerman Andrew A.¹,Wheeler David R.¹,Atcitty Stanley¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

Sandia National Laboratories, National Nuclear Security Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4889883

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