Thermal‐oxidation‐induced strain in31P+‐implanted Si〈100〉
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346633
Reference4 articles.
1. Annealing induced strain in31P+‐implanted Si (111) and Si (100)
2. Silicon Oxidation Studies: Some Aspects of the Initial Oxidation Regime
3. Initial stage of plastic deformation of substrates in heterostructures
4. Investigation of dislocations by backscattering spectrometry and transmission electron microscopy
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