Growth orientation dependence of Si doping in GaAsN-Reference-Cited by-同舟云学术

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Growth orientation dependence of Si doping in GaAsN

Published:2015-02-07 Issue:5 Volume:117 Page:055706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Han Xiuxun¹²,Dong Chen¹,Feng Qiang³,Ohshita Yoshio⁴,Yamaguchi Masafumi⁴

Affiliation:

1. Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000, People's Republic of China

2. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000, People's Republic of China

3. Optoelectronic Department, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China

4. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511, Japan

Funder

New Energy Development Organization (NEDO) under the ministry of Economy, Trade and Industry, Japan

Top Hundred Talents Program of Chinese Academy of Sciences

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4907389

Reference17 articles.

1. III N V semiconductors for solar photovoltaic applications

2. Mutual passivation of electrically active and isovalent impurities

3. Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys

4. Influence of N interstitials on the electronic properties of GaAsN alloys

5. Influence of Si–N complexes on the electronic properties of GaAsN alloys

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy;Journal of Alloys and Compounds;2021-12

2. Rhombohedral symmetry in GaAs1− x N x nanostructures;Semiconductor Science and Technology;2021-03-22

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