Interactive effects in the reactive ion etching of SiGe alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104942
Reference16 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
3. Limited reaction processing: Silicon epitaxy
4. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
5. Silicon vapor phase epitaxial growth catalysis by the presence of germane
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