Proton implantation for electrical insulation of the InGaAs/InAlAs superlattice material used in 8–15 μm-emitting quantum cascade lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4977067
Reference20 articles.
1. Optimised device processing for continuous-wave operation in GaAs-based quantum cascade lasers
2. Improved CW operation of GaAs-based QC lasers: T/sub max/= 150 K
3. Proton-Implanted Shallow-Ridge Quantum-Cascade Laser
4. 5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers
5. GaAs-AlGaAs quantum cascade lasers: physics, technology, and prospects
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1. Proton Implantation for Leaky-Wave Coupled Quantum Cascade Phase-Locked Laser Array;IEEE Photonics Technology Letters;2024-06-15
2. Supersymmetric quantum cascade laser array;Applied Physics Letters;2024-03-11
3. Improved Current Injection for Resonant Leaky-Wave Coupled Arrays of Mid-Infrared Quantum Cascade Lasers;2023 IEEE Photonics Conference (IPC);2023-11-12
4. Evaluation of channel transmission of nanoelectronic devices on low-dimensional structures with quantum confinement;Journal of Physics: Conference Series;2020-06-01
5. Effects of ion bombardment on interband cascade laser structures;Quantum Sensing and Nano Electronics and Photonics XVII;2020-01-31
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