Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy-Reference-Cited by-同舟云学术

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

Published:2016-02-29 Issue:9 Volume:108 Page:091112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mohajerani M. S.¹^ORCID,Khachadorian S.²^ORCID,Schimpke T.³^ORCID,Nenstiel C.²^ORCID,Hartmann J.¹^ORCID,Ledig J.¹,Avramescu A.³,Strassburg M.³,Hoffmann A.²,Waag A.¹

Affiliation:

1. Institute of Semiconductor Technology, Braunschweig University of Technology, and Laboratory of Emerging Nanometrology, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany

2. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

3. OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943079

Reference32 articles.