Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique-Reference-Cited by-同舟云学术

Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique

Published:1999-05-24 Issue:21 Volume:74 Page:3218-3220
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hamma S.,i Cabarrocas P. Roca

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.124110

Reference8 articles.

1. Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies

2. Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells

3. Band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys and their effect on solar cell performance

4. The mobility edge lineup of amorphous silicon and silicon-germanium alloys heterojunction

5. Analytical compensation of stray capacitance effect in Kelvin probe measurements

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