Surface photoabsorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Surface photoabsorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy

Published:1995-12-18 Issue:25 Volume:67 Page:3747-3749
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Murata H.,Ho I. H.,Hsu T. C.,Stringfellow G. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115370

Reference23 articles.

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging;Physical Chemistry Chemical Physics;2017

2. Optical in situ calibration of Sb for growing disordered GaInP by MOVPE;Journal of Crystal Growth;2015-09

3. An atomic ordering based AlInP unicompositional quantum well grown by MOVPE;Journal of Crystal Growth;2012-10

4. InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate;Japanese Journal of Applied Physics;2012-08-01

5. InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10$^{\circ}$ off Misoriented GaAs Substrate;Japanese Journal of Applied Physics;2012-07-23

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