Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn-Reference-Cited by-同舟云学术

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

Published:2012-04 Issue:7 Volume:111 Page:073106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reshchikov M. A.,Foussekis M.,McNamara J. D.,Behrends A.,Bakin A.,Waag A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3699312

Reference24 articles.

1. M. A. Reshchikov, Internal Quantum Efficiency of Photoluminescence in Wide-Bandgap Semiconductors, Chapter in Photoluminescence: Applications, Types and Efficacy, edited by M. A. Case and B. C. Stout (Nova Science Publishers, Inc., New York, 2012), pp. 53–120, ISBN: 978-1-61942-426-5.

2. Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

3. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

4. Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

5. Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode

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