Reduction of effective dielectric constant of gate insulator by low-resistivity electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1519736
Reference14 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
2. Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation
3. Characterization of inversion-layer capacitance of holes in Si MOSFET's
4. Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics
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