Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation-Reference-Cited by-同舟云学术

Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation

Published:2011-11 Issue:2 Volume:44 Page:361-366
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Yang X.M.,Wu X.M.,zhuge L.J.,Yu T.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference32 articles.

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2. Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

3. C. Adelmann, J. Meersschaut, L.-Å. Ragnarsson, T. Conard, A. Franquet, N. Sengoku, Y. Okuno, P. Favia,1 H. Bender, C. Zhao, B.J. O’Sullivan, A. Rothschild, T. Schram, J.A. Kittl, S. Van Elshocht, S. De Gendt, P. Lehnen, O. Boissière,2, C. Lohe2, Journal of Applied Physics 105 (2009) 053516

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