Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Published:2018-03 Issue:3 Volume:8 Page:035213
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Song Liang¹²,Fu Kai²,Zhao Jie²³,Yu Guohao²,Hao Ronghui²⁴^ORCID,Zhang Xiaodong²,Chen Fu¹²^ORCID,Fan Yaming²,Cai Yong²,Zhang Baoshun²⁵

Affiliation:

1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, People’s Republic of China

2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People’s Republic of China

3. Key Laboratory of Opto-Electronics Technology (Beijing University Technology), Ministry of Education, Beijing University of Technology, Beijing 100124, People’s Republic of China

4. School of Materials Science and Engineering, Nanjing University of Science and Technology, Xiao Ling Wei 200, Nanjing 210094, People’s Republic of China

5. Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, People’s Republic of China

Funder

Key Research and Development Program of Jiangsu Province

National Key Research and Development Program of China

National Key Scientific Instrument and Equipment Development Projects of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5024803