Effect of normal strain and external electric field on electronic properties of the GeC bilayer: A first-principles study-Reference-Cited by-同舟云学术

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Effect of normal strain and external electric field on electronic properties of the GeC bilayer: A first-principles study

Published:2019-12-01 Issue:12 Volume:9 Page:125324
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Min Luo¹,E Xu Yu²,Hao Shen Yu³

Affiliation:

1. Department of Physics, Shanghai Polytechnic University, Shanghai 201209, China

2. Department of Electronic Engineering, Shang Hai Jian Qiao University, Shanghai 201306, China

3. Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, China

Funder

Natural Science Foundation of Shanghai

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5109686

Reference42 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. The electronic properties of graphene

4. Single-layer MoS2 transistors

5. Space-Energy Digital-Coding Metasurface Based on an Active Amplifier

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te);ACS Applied Electronic Materials;2021-03-11

2. Electric Field-Tunable Structural Phase Transitions in Monolayer Tellurium;ACS Omega;2020-07-16

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