Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te)-Reference-Cited by-同舟云学术

Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te)

Published:2021-03-11 Issue:3 Volume:3 Page:1071-1079
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Cruzado Harvey N.¹,Dizon John Symon C.¹²,Macam Gennevieve M.¹^ORCID,Villaos Rovi Angelo B.¹,Huynh Thi My Duyen¹,Feng Liang-Ying¹,Huang Zhi-Quan¹,Hsu Chia-Hsiu¹,Huang Shin-Ming¹,Lin Hsin³,Chuang Feng-Chuan¹⁴⁵^ORCID

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424 Taiwan

2. Institute of Mathematical Sciences and Physics, University of the Philippines—Los Baños, Laguna 4031 Philippines

3. Institute of Physics, Academia Sinica, Taipei 11529 Taiwan

4. Department of Physics, National Tsing Hua University, Hsinchu 30013 Taiwan

5. Physics Division, National Center for Theoretical Sciences, Hsinchu 30013 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00907

Reference70 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Recent advances in graphene-based biosensors

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4. Recent development in 2D materials beyond graphene

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