Normal incidence photoresponse in GaAs/AlGaAs quantum well infrared photodetector-Reference-Cited by-同舟云学术

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Normal incidence photoresponse in GaAs/AlGaAs quantum well infrared photodetector

Published:1995-08-14 Issue:7 Volume:67 Page:930-931
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yuan Zhenyu,Chen Zhenghao,Cui Dafu,Ma Jianwei,Hu Qiang,Zhou Junming,Zhou Yueliang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114698

Reference7 articles.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetoabsorption in InSb quantum-well heterostructures;Physical Review B;2009-06-02

2. Intersubband absorption in n-type GaAs/AlGaAs (001) quantum wells: A tight-binding study;physica status solidi (b);2004-03

3. Observation of intersubband absorption in the forbidden polarisation for a stepped double barrier quantum well;IEE Proceedings - Optoelectronics;2003

4. Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption;Semiconductor Science and Technology;2002-08-14

5. Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III–V semiconductor Γ quantum wells;Journal of Applied Physics;2002-04-15

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