Characterization of defects in self‐ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362634
Reference28 articles.
1. Characterization of defects in Si and SiO2−Si using positrons
2. Damage formation and annealing of ion implantation in Si
3. Amorphization processes in self‐ion‐implanted Si: Dose dependence
4. Depth-dependent defect analysis in RBS/channeling
5. New model for damage accumulation in Si during self‐ion irradiation
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4. Depth profiling of vacancy defects and their thermal stability in N-implanted Si: a positron annihilation study;Journal of Physics D: Applied Physics;2010-07-23
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