Nonlinear effects in defect production by atomic and molecular ion implantation-Reference-Cited by-同舟云学术

Nonlinear effects in defect production by atomic and molecular ion implantation

Published:2015-01-07 Issue:1 Volume:117 Page:014312
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

David C.,Varghese Anto C.,Dholakia Manan,Chandra Sharat^ORCID,Nair K. G. M.,Panigrahi B. K.,Santhana Raman P.,Amirthapandian S.,Amarendra G.,Kennedy John

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905175

Reference43 articles.

1. Ion Implantation for Semiconductor Doping and Materials Modification

2. Charge-state dependence of energy loss of MeV dimers inGaAs(100)

3. Damage production in silicon by MeV Si cluster irradiation

4. Enhanced secondary-ion emission under gold-cluster bombardment with energies from keV to MeV per atom

5. Experimental study of molecular and cluster effects in secondary electron emission

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing the impact of sink strength, injected interstitial and grain growth on the temperature-dependent depth distribution of voids in nanocrystalline Ni;Surfaces and Interfaces;2024-03

2. Formation and dynamics of Au nanoparticles in a silica-glass: synergistic effects of temperature and fluences of ion irradiations;Applied Physics A;2018-08-29

3. Strain effect on the photoluminescence property of gold nanoclusters;Journal of Applied Physics;2018-02-28

4. Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations;Journal of Physics D: Applied Physics;2017-11-29