Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632542
Reference21 articles.
1. Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy
2. Designed emitter states in resonant tunneling through quantum dots
3. Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re‐evaluation using ultrathin quantum wells as a probe
4. Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy
5. Electron beam prepatterning for site control of self-assembled quantum dots
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1. Theory of shape evolution of InAs quantum dots on In0.5Ga0.5As/InP(001) substrate;New Journal of Physics;2009-07-07
2. Non-inverted electron-hole alignment in InAs/InP self-assembled quantum dots;physica status solidi (b);2009-04
3. Single electron charging in deterministically positioned InAs/InP quantum dots;Applied Physics Letters;2009-01-05
4. Correlation lengths in stacked InAs quantum dot systems studied by cross-sectional scanning tunnelling microscopy;Nanotechnology;2007-03-06
5. The determination of the size and shape of buried InAs/InP quantum dots by transmission electron microscopy;Ultramicroscopy;2005-06
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