Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866699
Reference22 articles.
1. Electrical creation of spin polarization in silicon at room temperature
2. Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
3. Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts
4. Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system
5. Spin injection and detection between CoFe/AlOx junctions and SOI investigated by Hanle effect measurements
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2. Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve;Applied Physics Letters;2023-02-06
3. Temperature Dependence of Two-Terminal Local Magnetoresistance in Co-Based Heusler Alloy/Ge Lateral Spin-Valve Devices;IEEE Transactions on Magnetics;2022-08
4. Semiconductor spintronics with Co2-Heusler compounds;MRS Bulletin;2022-06
5. Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi;Applied Physics Letters;2021-11-08
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