Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2770823
Reference29 articles.
1. Process‐induced mechanical stress in isolation structures studied by micro‐Raman spectroscopy
2. Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge
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