Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4768935
Reference44 articles.
1. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
2. Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators
3. Material Properties of Si-Ge/Ge Quantum Wells
4. Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion
5. Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon
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1. Modeling and design of tin doped group IV alloy based QWEAM;Optical and Quantum Electronics;2019-06-24
2. NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector;Optics Letters;2018-11-12
3. The intervalley scattering between direct and indirect valleys in Ge for optimization of the germanium light;Nanophotonics and Micro/Nano Optics IV;2018-10-25
4. Enhanced indirect-to-direct inter-valley scattering in germanium under tensile strain for improving the population of electrons in direct valley;Journal of Physics: Condensed Matter;2018-10-23
5. Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitions;Acta Physica Sinica;2018
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