Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures
Author:
Funder
RFBR
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862176
Reference21 articles.
1. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
2. AlxGa1−xAsySb1−y phase diagram
3. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
4. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
5. Carrier recombination in 1.3μm GaAsSb∕GaAs quantum well lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures;Nanotechnology;2016-12-01
2. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μm due to increased charge carrier's localization;Journal of Applied Physics;2014-11-28
3. The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures;Technical Physics Letters;2014-10
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