Quantitative nanoscale metrology study of Cu/SiO2 interconnect technology using transmission x-ray microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1326489
Reference10 articles.
1. Reliability and Copper Interconnections with Low Dielectric Constant Materials
2. Copper interconnections and reliability
3. Adhesion and reliability of copper interconnects with Ta and TaN barrier layers
4. Electromigration-induced transgranular failure mechanisms in single-crystal aluminum interconnects
5. In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films
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