Differential I/V of heterostructure correlates with laser threshold
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654303
Reference8 articles.
1. Preparation and Investigation of Epitaxial Layers of AlxGa1-xAs solid Solutions and of Heterojunctions in the AlAs-GaAs system
2. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
3. STRIPE‐GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS: MODE STRUCTURE AND cw OPERATION ABOVE ROOM TEMPERATURE
4. Highly Uniform Alx Ga1−x As Double‐Heterostructure Lasers and Their Characteristics at Room Temperature
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1. Synthesis of Hollow-Cone-Like Carbon and Its Application as Support Material for Fuel Cells;Journal of The Electrochemical Society;2009
2. Non-linearities in laser diodes;Journal of Physics and Chemistry of Solids;1988-01
3. Spectral characteristics of single‐mode injection lasers: The power‐gain curve from weak stimulation to full output;Journal of Applied Physics;1982-01
4. A comprehensive model of the injection laser: Formulation and test of the current dependence of spontaneous and coherent emission;Journal of Applied Physics;1980
5. An Automatic Bias Control (ABC) Circuit for Injection Lasers;Bell System Technical Journal;1978-05-06
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