Highly Uniform Alx Ga1−x As Double‐Heterostructure Lasers and Their Characteristics at Room Temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653944
Reference12 articles.
1. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
2. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
3. Continuous Operation of Junction Lasers at Room Temperature
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1. Low threshold InGaAsP/InP buried crescent laser with double current confinement structure;IEEE Journal of Quantum Electronics;1981-05
2. Low‐threshold room‐temperature double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbxinjection lasers at 1‐μm wavelengths;Applied Physics Letters;1975-11-15
3. Transverse-junction-stripe lasers with a GaAs p-n homojunction;IEEE Journal of Quantum Electronics;1975-07
4. Near-equilibrium LPE growth of GaAs_Ga1−xA1xAs double heterostructures;Journal of Crystal Growth;1974-12
5. Near-equilibrium LPE growth of GaAs-Ga1−xAlxAs double heterostructures;Journal of Crystal Growth;1974-12
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