Co diffusion and growth of buried single‐crystal CoSi2in Si(111) by endotaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351660
Reference8 articles.
1. Epitaxy of metal silicides
2. Control of pinholes in epitaxial CoSi2layers on Si(111)
3. Control of epitaxial orientation of Si on CoSi2(111)
4. Infrared response from metallic particles embedded in a single‐crystal Si matrix: The layered internal photoemission sensor
5. Mesotaxy: Single‐crystal growth of buried CoSi2layers
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1. Large interface diffusion in endotaxial growth of MnP films on GaP substrates;Journal of Applied Physics;2014-10-07
2. The growth and applications of silicides for nanoscale devices;Nanoscale;2012
3. Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces;Thin Solid Films;1996-10
4. Thermally-induced evolution of codeposited CoSi layers on Si(100) surfaces;Surface Science;1996-09
5. Topics in solid phase epitaxy: Strain, structure and geometry;Materials Science and Engineering: R: Reports;1996-01
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