Frequency Response of Gold Impurity Centers in the Depletion Layer of Reverse‐Biased Siliconp+nJunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661385
Reference12 articles.
1. Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions
2. Effects of deep impurities on n+p junction reverse-biased small-signal capacitance
3. A NEW METHOD FOR DETERMINATION OF DEEP‐LEVEL IMPURITY CENTERS IN SEMICONDUCTORS
4. High injection in epitaxial transistors
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1. Capacitance dispersion in ion implanted 4H and 6H-silicon carbide;Journal of Applied Physics;2002-10-15
2. Fast neutron radiation damage effects on high resistivity silicon junction detectors;Journal of Electronic Materials;1992-07
3. Impurities in Semiconductors: Experimental;Basic Properties of Semiconductors;1992
4. Effects of fast neutron radiation on the electrical properties of silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1991-10
5. Studies of frequency dependent C-V characteristics of neutron irradiated p/sup +/-n silicon detectors;IEEE Transactions on Nuclear Science;1991-04
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