Deep level transient spectroscopy analysis of spatially dependent doping profiles
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345281
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1. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates;Journal of Applied Physics;2009-01
2. Chapter 2 Defect Identification Using Capacitance Spectroscopy;Semiconductors and Semimetals;1999
3. Small-signal deep-level transient spectroscopy as a local probe of potential fluctuations due to electrically active defects;Semiconductor Science and Technology;1997-02-01
4. Direct determination of diuretic drugs in urine by capillary zone electrophoresis using fluorescence detection;Journal of Chromatography B: Biomedical Sciences and Applications;1996-12
5. Electrical behavior of implanted carbon impurities in fluorine co‐implanted GaAs;Journal of Applied Physics;1996-10
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