Telecom InP-based quantum dash photodetectors grown on Si
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
2. Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China
Funder
Research Grants Council, University Grants Committee
Innovation and Technology Fund
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0045485
Reference41 articles.
1. Recent progress of III–V quantum dot infrared photodetectors on silicon
2. Selectively Grown III-V Lasers for Integrated Si-Photonics
3. Inverse-designed low-loss and wideband polarization-insensitive silicon waveguide crossing
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5. High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond
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