Recent progress of III–V quantum dot infrared photodetectors on silicon-Reference-Cited by-同舟云学术

Recent progress of III–V quantum dot infrared photodetectors on silicon

Published:2019 Issue:46 Volume:7 Page:14441-14453
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ren Aobo¹²³⁴^ORCID,Yuan Liming¹²³⁴,Xu Hao¹²³⁴,Wu Jiang¹²³⁴,Wang Zhiming¹²³⁴

Affiliation:

1. Institute of Fundamental and Frontier Sciences

2. University of Electronic Science and Technology of China

3. Chengdu 610054

4. China

Abstract

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC05738B

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