Investigation of antiphase domain annihilation mechanism in 3C–SiC on Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1605258
Reference20 articles.
1. Polar-on-nonpolar epitaxy
2. Scattering mechanisms and defects in InP epitaxially grown on (001) Si substrates
3. Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
4. A closer study on the self-annihilation of antiphase boundaries in GaAs epilayers
5. Surface-Structure-Controlled Heteroepitaxial Growth of3C–SiC(001)3×2on Si(001): Simulations and Experiments
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1. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05
2. Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition;Acta Materialia;2015-10
3. Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects;Materials Science Forum;2015-06
4. Epitaxial Growth of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26
5. Growth mechanisms of 3C-SiC layer by carbonization of Si(100) substrates in high-vacuum region;Japanese Journal of Applied Physics;2014-03-27
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