High-performance resistive switching characteristics of programmable metallization cell with oxidized Cu-Ti electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4823818
Reference23 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
3. Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)
4. A comprehensive model for bipolar electrical switching of CuTCNQ memories
5. Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch
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3. Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications;Nanoscale Research Letters;2020-04-22
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