Affiliation:
1. School of Materials Science and Engineering, Xiangtan University , Hunan, Xiangtan 411105, China
Abstract
As a typical two-dimensional van der Waals ferroelectric material, α-In2Se3 has great potential in the applications of optoelectronic devices, memories, sensors, detectors, and synapses. Although it has been proved that α-In2Se3 is with simultaneous intercorrelated in-plane and out-of-plane ferroelectric polarization, the degree-of-freedom of in-plane ferroelectric polarization in the α-In2Se3 and its influence on the other properties have always been neglected because of the difficulties in the characterization and application, comparing with the out-of-plane ferroelectric polarization. Specifically, it has not been revealed the influence mechanism how the in-plane ferroelectric polarization modifies the photodetection performance of the α-In2Se3-based transistor. In this report, the four-terminal transistors based on the multi-layered α-In2Se3 are prepared and used to investigate the in-plane ferroelectric polarization influenced photodetection performance. We have demonstrated that the in-plane ferroelectric polarization may reduce the optical response time of α-In2Se3-based transistors, and the pyroelectric performance induced by the in-plane ferroelectric polarization adds a feature to the α-In2Se3-based transistors. These results promote the four-terminal α-In2Se3-based transistor to be a multi-functional device, which can simultaneously detect the light and its induced temperature variation. Our work may offer an approach to understand the in-plane ferroelectric polarization-modulated multi-functional optoelectronics.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province, China
the Research Foundation of Education Bureau of Hunan Province, China
Subject
Physics and Astronomy (miscellaneous)