Extremely low non‐alloyed specific contact resistance ρc(10−8Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C‐doped (1021cm−3)p++GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347427
Reference16 articles.
1. The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation
2. AlGaAs/GaAs heterojunction bipolar transistors with small size fabricated by a multiple self-alignment process using one mask
3. Ohmic Contacts to p-GaAs with Au/Zn/Au Structure
4. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy
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