Extremely low non‐alloyed specific contact resistance ρc(10−8Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C‐doped (1021cm−3)p++GaAs-Reference-Cited by-同舟云学术

Extremely low non‐alloyed specific contact resistance ρc(10−8Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C‐doped (1021cm−3)p++GaAs

Published:1991-06-15 Issue:12 Volume:69 Page:8227-8232
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Usagawa T.,Kobayashi M.,Mishima T.,Rabinzohn P. D.,Ihara A.,Kawata M.,Yamada T.,Tokumitsu E.,Konagai M.,Takahashi K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.347427

Reference16 articles.

1. The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation

2. AlGaAs/GaAs heterojunction bipolar transistors with small size fabricated by a multiple self-alignment process using one mask

3. Ohmic Contacts to p-GaAs with Au/Zn/Au Structure

4. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy

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