Texture‐induced asymmetric reactions in TiN/Al–Cu/TiN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360398
Reference5 articles.
1. Phase equilibria in thin-film metallizations
2. Mechanisms for success or failure of diffusion barriers between aluminum and silicon
3. Interfacial reactions in epitaxial Al/Ti1−xAlxN (0≤x≤0.2) model diffusion‐barrier structures
4. Stress and anisotropy effects in the interfacial reactions of Al and TiNx
5. Interfacial reactions in single-crystal-TiN (100)/Al/polycrystalline-TiN multilayer thin films
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1. Reaction of thin Ni films with Ge: Phase formation and texture;Journal of Applied Physics;2006-08
2. Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-11
3. Optical and electronic properties of TiCxNy films;Journal of Applied Physics;2001-09-15
4. Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems;Thin Solid Films;2001-07
5. Kinetic and Mechanistic Studies of the Chemical Vapor Deposition of Tungsten Nitride from Bis(Tertbutylimido)Bis(Tertbutylamido)Tungsten;The Journal of Physical Chemistry B;2001-04-07
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