Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97389
Reference9 articles.
1. Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)
2. Growth of CdTe on InSb by organometallic vapor phase epitaxy
3. Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates
4. The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition
5. An MBE route towards CdTe/InSb superlattices
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1. High-resolution photoluminescence studies of (211) CdTe grown on (211)B GaAs substrate;Journal of Crystal Growth;1994-07
2. The effect of GaAs surface stabilization on the properties of ZnSe grown by organometallic vapor phase epitaxy;Journal of Crystal Growth;1992-11
3. Characteristics of ZnSe Layers Grown on Zn-Stabilized and Se-Stabilized GaAs Substrates;MRS Proceedings;1992
4. Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by organometallic vapor phase epitaxy;Applied Physics Letters;1991-02-25
5. Photoluminescence spectroscopy of CdTe epilayers grown by rf magnetron sputtering;Journal of Applied Physics;1990-12
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