Schottky barrier formation on electron beam deposited amorphous Si1−xGex: H alloys and amorphous (Si/Si1−xGex): H modulated structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96513
Reference16 articles.
1. Structural, electrical, and optical properties ofa-Si1−xGex:H and an inferred electronic band structure
2. Electronic Properties of Amorphous SixGe1−x:H Films
3. Electronic properties of hydrogenated amorphous silicon-germanium alloys
4. Defects in hydrogenated amorphous silicon‐carbon alloy films prepared by glow discharge decomposition and sputtering
5. A new evaporation method for preparing hydrogenated amorphous silicon films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of main-ion-beam parameters on some properties of a-Si:H prepared by ion-beam-assisted reactive evaporation;Canadian Journal of Physics;1991-03-01
2. a-Si:H prepared by low-energy ion beam assisted reactive evaporation;Canadian Journal of Physics;1990-02-01
3. Hydrogen dissociation and incorporation into amorphous silicon produced by electron beam evaporation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-03
4. Electrical and Optical Properties of Amorphous Si1-xSnx: H Structures;MRS Proceedings;1986
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