Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations-Reference-Cited by-同舟云学术

Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations

Published:1995-08 Issue:3 Volume:78 Page:1696-1706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Speck J. S.,Daykin A. C.,Seifert A.,Romanov A. E.,Pompe W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.360267

Reference20 articles.

1. Domain Properties in BaTiO3

2. Equilibrium structure of epitaxial layers

3. Strain relaxation by domain formation in epitaxial ferroelectric thin films

4. Elastic energy release due to domain formation in the strained epitaxy of ferroelectric and ferroelastic films

5. Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory

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