Spontaneous pattern of orthogonal ferroelectric domains in epitaxial KNN films

Author:

Groppi C.1ORCID,Maspero F.12ORCID,Asa M.3ORCID,Pavese G.1ORCID,Rinaldi C.1ORCID,Albisetti E.1ORCID,Badillo-Avila M.1ORCID,Bertacco R.13ORCID

Affiliation:

1. Department of Physics, Politecnico di Milano 1 , Piazza Leonardo da Vinci 32, Milano 20133, Italy

2. CNR Istituto di Fotonica e Nanotecnologie 2 , Milano, Italy

3. Polifab, Politecnico di Milano 3 , Via Giuseppe Colombo 81, Milano 20133, Italy

Abstract

Lead-free piezoelectric (K, Na)NbO3 (KNN) is considered one of the promising candidates for the replacement of Pb(ZrxTi1−x)O3. Several studies underlined the issue of K and Na volatility with increasing deposition temperatures, leading to high leakage currents in thin films, which still represents a major drawback for applications. This paper shows how epitaxial growth with concomitant preferred orientation of KNN films on niobium-doped strontium titanate (Nb:STO) depends on growth temperature and substrate strain. A preferred out-of-plane polar (001) orientation of KNN is obtained at high temperatures (>600 °C), while (100) orientation is dominant for lower ones. The (001) orientation is forced out-of-plane due to the sizeable in-plane stress derived from a negative lattice mismatch of pseudo-cubic KNN with respect to the underlying cubic (001) Nb:STO substrate. Moreover, we show that K-Na deficiency and high leakage of epitaxial KNN films deposited at high temperatures are accompanied by the appearance of a pattern of orthogonal spontaneous ferroelectric domains aligned to the [100] and [010] directions of Nb:STO. This pattern, visible in secondary electron microscopy, piezoforce response microscopy, and conductive atomic force microscopy images, is uncorrelated to the surface morphology. Supported by reciprocal space mapping by x-ray diffraction, this phenomenon is interpreted as the result of strain relaxation via ferroelectric domain formation related to K-Na deficient films displaying a sizable and increasing compressive strain when grown on Nb:SrTiO3. Our findings suggest that strain engineering strategies in thin films could be used to stabilize specific configurations of piezo- and ferroelectric domains.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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