Temperature dependence of minority‐carrier lifetime in iron‐diffusedp‐type silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348570
Reference18 articles.
1. Statistics of the Recombinations of Holes and Electrons
2. Electron-Hole Recombination in Germanium
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. Iron and the iron‐boron complex in silicon
5. Nonradiative recombination via deep impurity levels in silicon: Experiment
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