Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor-Reference-Cited by-同舟云学术

Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor

Published:2015-12-07 Issue:21 Volume:118 Page:214305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jo Mingyu¹,Uchida Takafumi¹,Tsurumaki-Fukuchi Atsushi¹^ORCID,Arita Masashi¹,Fujiwara Akira²,Ono Yukinori³,Nishiguchi Katsuhiko²,Inokawa Hiroshi⁴,Takahashi Yasuo¹

Affiliation:

1. Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan

2. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan

3. Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan

4. Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku, Hamamatsu 432-8011, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936790

Reference37 articles.

1. Silicon single-electron devices

2. Si complementary single-electron inverter with voltage gain

3. A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

4. Single-electron-based flexible multivalued logic gates

5. Exclusive-OR gate using a two-input single-electron transistor in single-wall carbon nanotubes

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Arrangement rule of stability regions and single-electron transfer in common-gate quadruple-dot devices for the real ratio of gate capacitances;Journal of Computational Electronics;2024-01-04

2. Single-electron pumping in common-gate triple-dot devices with arbitrary asymmetric gate capacitance distributions;Journal of Computational Electronics;2020-08-02

3. Periodic Coulomb blockade oscillations observed in single-layered Fe nanodot array;Thin Solid Films;2020-06

4. Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor;Brazilian Journal of Physics;2018-05-11

5. Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-03