Point defects in group III nitrides: A comparative first-principles study-Reference-Cited by-同舟云学术

Point defects in group III nitrides: A comparative first-principles study

Published:2019-06-07 Issue:21 Volume:125 Page:215705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gao Yinlu¹,Sun Dan¹,Jiang Xue¹,Zhao Jijun¹^ORCID

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China

Funder

Science Challenge Project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5094356

Reference67 articles.

1. Evidence for a radiation-responsive ‘p53 gateway’ contributing significantly to the radioresistance of lepidopteran insect cells

2. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

3. Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)

4. Point-defect energies in the nitrides of aluminum, gallium, and indium

5. Electron Irradiation Induced Trap In N-Type Gan

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