Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition-Reference-Cited by-同舟云学术

Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Published:2015-12-07 Issue:23 Volume:107 Page:231905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee S. C.¹,Youngblood N.¹,Jiang Y. B.²,Peterson E. J.²,Stark C. J. M.³,Detchprohm T.³,Wetzel C.³^ORCID,Brueck S. R. J.¹

Affiliation:

1. Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106, USA

2. Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131, USA

3. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

Funder

National Science Foundation (NSF)

New York State Foundation for Science, Technology and Innovation (NYSTAR)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4936772

Reference21 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

3. Auger recombination in InGaN measured by photoluminescence

4. Origin of efficiency droop in GaN-based light-emitting diodes

5. For review, see H. Morkoc , Handbook of Nitride Semiconductors and Devices ( John Wiley & Sons, 2009) and references therein.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of cubic GaN on U-grooved Si (100);Applied Physics Letters;2022-07-18

2. Luminescence Characteristics in Hexagonal and Cubic‐Phase GaN on Micropatterned Si(100) Substrate;physica status solidi (b);2021-11-14

3. Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics;Progress in Quantum Electronics;2021-05

4. Simple, compact, high-resolution monochromatic x-ray source for characterization of x-ray calorimeter arrays;Review of Scientific Instruments;2020-08-01

5. Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30