Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1464651
Reference18 articles.
1. GaxIn1−xAs quantum wire heterostructures formed by strain‐induced lateral‐layer ordering
2. Strain effect on the growth of 3D In(Ga)As wire structures on InP(001)
3. High-density InAs nanowires realized in situ on (100) InP
4. InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(001)
5. Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)
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1. Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots;Journal of the Korean Physical Society;2011-12-15
2. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011
3. Stacking pattern of multi-layer InAs quantum wires embedded in In0.53Ga0.47−xAlxAs matrix layers grown lattice-matched on InP substrate;Journal of Crystal Growth;2010-09
4. Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation;Journal of Crystal Growth;2009-11
5. Influences of Strain and Phase Separation on the Alignment Characteristics of Five-Stacked InAs/InAlGaAs Quantum Dots Grown on InP(001);Journal of the Korean Physical Society;2009-04-15
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